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this is information on a product in full production. april 2013 docid024427 rev 1 1/14 14 STQ1HN60K3-AP n-channel 600 v, 6.7 typ., 0.4 a supermesh3? power mosfet in a to-92 package datasheet ? production data figure 1. internal schematic diagram features ? 100% avalanche tested ? extremely high dv/dt capability ? gate charge minimized ? very low intrinsic capacitance ? improved diode reverse recovery characteristics ? zener-protected applications ? switching applications description this supermesh3? power mosfet is the result of improvements applied to stmicroelectronics? supermesh? technology, combined with a new optimized vertical structure. this device boasts an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. d(2) g(1) s(3) am01476v1 to-92 1 2 3 order code v ds r ds(on) max i d p tot STQ1HN60K3-AP 600 v 8 0.4 a 3 w table 1. device summary order code marking package packaging STQ1HN60K3-AP 1hn60k3 to-92 ammopack www.st.com
contents STQ1HN60K3-AP 2/14 docid024427 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
docid024427 rev 1 3/14 STQ1HN60K3-AP electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain- source voltage 600 v v gs gate- source voltage 30 v i d (1) 1. current limited by package power capability drain current (continuous) at t c = 25 c 0.4 a i d (1) drain current (continuous) at t c = 100 c 0.25 a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 1.60 a p tot total dissipation at t c = 25 c 3 w i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 1.2 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 60 mj dv/dt (3) 3. i sd 1.2 a, di/dt 400 a/s,v ds peak v (br)dss , v dd = 80% v (br)dss . peak diode recovery voltage slope 5 v/ns t j operating junction temperature -55 to 150 c t stg storage temperature c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max. 42 c/w
electrical characteristics STQ1HN60K3-AP 4/14 docid024427 rev 1 2 electrical characteristics (t case =25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v v ds = 600 v, t c =125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 50 a 2 3.75 4.5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 0.6 a 6.7 8 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 50 v, f = 1 mhz, v gs = 0 -140-pf c oss output capacitance - 13 - pf c rss reverse transfer capacitance -2-pf c o(tr) (1) 1. c o(tr) is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v ds equivalent capacitance time related v ds = 0 to 480 v, v gs = 0 -9-pf c o(tr) (2) 2. c o(tr) is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v ds equivalent capacitance energy related -6-pf r g gate input resistance f=1 mhz open drain - 10 - q g total gate charge v dd = 480 v, i d = 1.2 a, v gs = 10 v (see figure 16) -9.5-nc q gs gate-source charge - 1.5 - nc q gd gate-drain charge - 6.5 - nc
docid024427 rev 1 5/14 STQ1HN60K3-AP electrical characteristics the built-in back-to-back zener diodes have been specifically designed to enhance not only the device?s esd capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. in this respect, the zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. the integrated zener diodes thus eliminate the need for external components. table 6. switching times symbol parameter test conditions min. typ. max unit t d(on) turn-on delay time v dd = 300 v, i d = 0.6 a, r g = 4.7 , v gs = 10 v (see figure 10) -7-ns t r rise time - 10 - ns t d(off) turn-off-delay time - 23 - ns t f fall time - 31 - ns table 7. source drain diode symbol parameter test conditions min. typ. max unit i sd source-drain current - 0.4 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 1.6 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 1.2 a, v gs = 0 - 1.6 v t rr reverse recovery time i sd = 1.2 a, di/dt = 100 a/s v dd = 60 v (see figure 11) -180 ns q rr reverse recovery charge - 500 nc i rrm reverse recovery current - 5.6 a t rr reverse recovery time i sd = 1.2 a, di/dt = 100 a/s v dd = 60 v t j = 150 c (see figure 11) -200 ns q rr reverse recovery charge - 570 nc i rrm reverse recovery current - 6 a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit v (br)gso gate-source breakdown voltage i gs = 1 ma, i d =0 30 - - v
electrical characteristics STQ1HN60K3-AP 6/14 docid024427 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance i d 0.1 0.01 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 10ms 0.001 tj=150c tc=25c single pulse 100 ms 1s 1 am15685v1 figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs temperature figure 7. static drain-source on-resistance i d 1.2 0.8 0.4 0 0 8 v ds (v) (a) 4 12 1.6 5v 6v 7v v gs =10v 16 am15648v1 i d 0.4 0 0 4 v gs (v) 8 (a) 2 6 0.8 1.2 v ds =15v 1.6 am15649v1 bv dss -75 t j (c) (norm) -50 0 -25 0.85 0.90 0.95 1.00 1.05 i d =1 ma 25 50 75 100 125 1.10 am15650v1 r ds(on) 6 5 4 3 0.4 0.6 i d (a) ( ) 0.5 0.7 7 8 9 1.1 0.8 0.9 1 1.2 v gs =10v am15651v1
docid024427 rev 1 7/14 STQ1HN60K3-AP electrical characteristics figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward characteristics figure 13. output capacitance stored energy v ds v gs 6 4 2 0 0 q g (nc) (v) 4 8 2 10 v ds =480v i d =1.2a 300 200 100 0 400 v ds 6 8 500 v ds (v) am15652v1 c 100 10 1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss am15653v1 v gs(th) 1.00 0.90 0.80 0.70 -75 t j (c) (norm) -50 1.10 75 -25 125 i d =50a 0 25 50 100 am15654v1 r ds(on) 2.0 1.5 1.0 0.5 t j (c) (norm) 2.5 0 -75 -50 75 -25 125 0 25 50 100 i d =0.6 a v gs =10 v am15655v1 v sd 0.6 0.8 i sd (a) (v) 0.7 1.1 0.9 1 0.50 0.55 0.60 0.65 0.70 0.75 0.80 t j =-50c t j =150c t j =25c 0.85 0.90 0.95 1.2 am15656v1 eoss 0 v ds (v) (j) 400 200 600 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 am15657v1
electrical characteristics STQ1HN60K3-AP 8/14 docid024427 rev 1 figure 14. maximum avalanche energy vs. starting t j e as 0 50 t j (c) (mj) 25 75 100 0 10 20 30 40 v dd =50v i d =1.2 a 50 60 am15708v1
docid024427 rev 1 9/14 STQ1HN60K3-AP test circuits 3 test circuits figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times figure 18. unclamped inductive load test circuit figure 19. unclamped inductive waveform figure 20. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data STQ1HN60K3-AP 10/14 docid024427 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid024427 rev 1 11/14 STQ1HN60K3-AP package mechanical data table 9. to-92 ammopack mechanical data dim. mm min. typ. max. a1 4.80 t 3.80 t1 1.60 t2 2.30 d 0.45 0.47 0.48 p0 12.50 12.70 12.90 p2 5.65 6.35 7.05 f1, f2 2.40 2.50 2.94 f3 4.98 5.08 5.48 delta h -2.00 2.00 w 17.50 18.00 19.00 w0 5.50 6.00 6.50 w1 8.50 9.00 9.25 w2 0.50 h 18.50 21.00 h0 15.50 16.00 18.20 h1 25.00 27.00 h3 0.50 1.00 2.00 d0 3.80 4.00 4.20 t 0.90 l 11.00 l1 3.00 delta p -1.00 1.00
package mechanical data STQ1HN60K3-AP 12/14 docid024427 rev 1 figure 21. to-92 ammopack drawing w w1 w0 w2 a 1 d d0 h1 h h0 l l1 f1 f2 p2 p0 delta h t2 t1 t t f3 h3 0050910s_rev_u
docid024427 rev 1 13/14 STQ1HN60K3-AP revision history 5 revision history table 10. document revision history date revision changes 09-apr-2013 1 first release.
STQ1HN60K3-AP 14/14 docid024427 rev 1 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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